IEEE Bombay Section

1. Saturday, July 20, 2002 1630 hrs
   "Nano-FET Fluctuation Physics" by Dr. Renuka Jindal, Electron Devices Society Distinguished Lecturer
            Distinguished Member of the Technical Staff
            Agere Systems, Murray Hill, USA
   Venue: EE Seminar Hall, IIT Bombay, Powai, Mumbai 400076
   Activity of EDS Chapter of Bombay Section

   Abstract: Following its first demonstration in 1960 at Bell Labs, the understanding of the intrinsic noise mechanisms in the MOSFET quickly followed. However, as technology improved, the discovery and understanding of a host of other noise mechanisms slowly evolved over time. In this presentation, we will introduce the concept of random noise and describe its manifestation in the context of the MOSFET structure. This includes channel thermal noise, gate-induced noise, gate resistance noise, substrate resistance noise, substrate current supershot noise, bulk charge induced transconductance reduction noise and channel hot carrier noise. We will also discuss changes in the device structure to improve the noise performance by suppressing the effects of the extrinsic noise mechanisms. This work has resulted in almost an order of magnitude improvement in the noise performance of these devices making them suitable for lightwave and wireless communication applications.
   About the Speaker:
   Dr. Jindal received the Ph.D. degree in Electrical Engineering from the University of Minnesota 1981. Upon graduation, he joined Bell Laboratories at Murray Hill, New Jersey. His experience at Bell Labs over these last 21 years has bridged both technical and administrative roles. On the technical side he has worked in all three areas of devices, circuits and systems. Highlights include fundamental studies of noise behavior of scaled sub-micrometer MOS devices and the design of high-performance GigaHertz Band RF integrated circuits. He has also been involved in the study of the physics of multiplication phenomena and low noise signal amplification and detection in terms of novel devices and circuits including optoelectronic integration. On the administrative side, Dr Jindal has developed and managed significant extramural funding from federal agencies and independent Lucent business units. He was solely responsible, in Lucent Technologies, for developing and deploying a corporate-wide manufacturing test strategy in relation to contract manufacturing. On the academic side, he established and taught an RF IC design courses at Rutgers University. He also participates in ABET activities as an evaluator for Electrical Engineering programs at institutions in the United States.
   Dr. Jindal received the Distinguished Technical Staff Award from Bell Labs in 1989. In 1991, he was elected Fellow of the IEEE for his contributions to the field of sold-state device noise theory and practice. He was the Editor-in-Chief of the IEEE Transactions on Electron Devices from 1990 to 2000. In December 2000 he received the IEEE 3rd Millennium Medal. Currently he is publications chair for the IEEE Electron Devices Society and a member of the Electron Devices Society Advisory Committee and Executive committee.
   Dr. Jindal is the Chapter Partner of all the EDS Chapters in India, and responsible for the initiation of the Bombay Chapter in 1999.